Effective Current-Driven Memory Operations for Low-Power ReRAM Applications
Date Issued
2023
Author(s) USM
Vourkas, Ioannis
DOI
10.1109/ACCESS.2023.3276825
Abstract
Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innovative
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