Impact of annealing on perpendicular magnetic anisotropy in W/MgAl2O4/CoFeMnSi/W/CoFeMnSi/MgAl2O4/W double storage layers for upcoming MTJs
Date Issued
2024-08
Author(s) USM
DOI
10.1016/j.jmmm.2024.172225
Abstract
In this study, we achieved the improvement of uniaxial out-of-plane/perpendicular magnetic anisotropy (PMA) in the W/MgAl 2 O 4 /CoFeMnSi/W/CoFeMnSi/MgAl 2 O 4 /W heterostructure by manipulating the annealing temperature (T A ) [350 degrees C, 450 degrees
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