SiC-mosfet or Si-IGBT: Comparison of design and key characteristics of a 690 V grid-tied industrial two-level voltage source converter
Date Issued
2021-06
Author(s) USM
DOI
10.3390/en14113054
Abstract
In this paper, a design driven comparison between two 190 kVA industrial three-phase two-level voltage source converter (2L-VSC) designs based in silicon carbide (SiC) and silicon (Si) for 690 V grids is presented. These two designs were conceived to have
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